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Characteristics of gate-all-around silicon nanowire and nanosheet MOSFETs with various spacers
Sekhar Reddy Kola,
Yiming Li-
*
, Narasimhulu Thoti
*
此作品的通信作者
電信工程研究所
研究成果
:
Conference contribution
›
同行評審
18
引文 斯高帕斯(Scopus)
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Keyphrases
Silicon Nanowires (SiNWs)
100%
MOSFET
100%
Gate-all-around
100%
Silicon Nanosheet (SiNS)
100%
Random Telegraph Noise
66%
Dual-spacers
66%
On-state Current
33%
Off-state Current
33%
DC Characteristics
33%
Spacer Dielectrics
33%
Characteristic Charge
33%
Effective Channel Width
33%
Si Nanosheets
33%
Sub-5-nm Node
33%
Single Charge Trap
33%
Physics
Field Effect Transistor
100%
Metal Oxide Semiconductor
100%
Nanosheet
100%
Nanowire
100%
Dielectric Material
33%
Material Science
Silicon
100%
Nanowire
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Nanosheet
100%
Dielectric Material
33%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Nanosheet
100%
Nanowire
100%
Nodes
33%
Dielectrics
33%
Effective Channel
33%