@inproceedings{89047e3cd49b4b4caaa12b6d2ddc30ff,
title = "Characteristics of gate-all-around silicon nanowire and nanosheet MOSFETs with various spacers",
abstract = "We estimate DC characteristics and single-charge trap (SCT) induced random telegraph noise (RTN) of gate-all-around (GAA) silicon nanowire (NW) and nanosheet (NS) metal-oxide-semiconductor field effect transistor (MOSFETs) for sub-5-nm nodes. Devices with various dielectric spacers from low- to high-κ including asymmetric dual spacers (ADS) are considered. More than 31% boost on the normalized on-state currents is observed for the explored devices with high-κ and ADS spacers. Similarly, for the normalized off-state currents, more than 50% reduction is achieved. The largest magnitude of the RTN (ΔID/ID×100%) is 6.7% for the nominal GAA Si NS MOSFET with an effective channel width of 40-nm.",
keywords = "DC characteristics, Gate-all-around, MOSFETs., Nanowire, Nonosheet, RTN, SCT",
author = "Kola, {Sekhar Reddy} and Yiming Li- and Narasimhulu Thoti",
note = "Publisher Copyright: {\textcopyright} 2020 The Japan Society of Applied Physics.; 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 ; Conference date: 03-09-2020 Through 06-10-2020",
year = "2020",
month = sep,
day = "23",
doi = "10.23919/SISPAD49475.2020.9241603",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "79--82",
booktitle = "2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020",
address = "United States",
}