Characteristics of Ga_0.51In_0.49P/GaAs heterostructures grown on Si substrates by organometallic epitaxy

We have demonstrated the feasibility of heteroepitaxial growth of Ga _0.51In_0.49P/GaAs layers on Si substrates by low-pressure organometallic vapor phase deposition. The growth parameters of the GaAs buffer layer were confirmed to be the controlling factors in obtaining higher quality Ga_0.51In_0.49P on Si. Under the optimum growth conditions, specular single-crystal Ga_0.51In_0.49P layers can be reproducibly obtained. The room-temperature electron mobility of the undoped Ga_0.51In_0.49P epilayer can reach 1000 cm² /V s with a carrier concentration of 2×10¹⁶ cm ^-3. The efficient photoluminescence indicates that the Ga_0.51In_0.49P grown layer is of high optical quality. In addition, the GaAs intermediate layer is also effective in reducing the residual tensile stress in the Ga_0.51In_0.49P film on Si. The results presented can compete with those reported previously for the OMVPE-grown Ga_xIn_1-xP on GaAs substrates.