Characteristics of fluorine implantation for HfO2 gate dielectrics with high-temperature postdeposition annealing

Chao Sung Lai*, Woei Cherng Wu, Jer Chyi Wang, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

In this work, we describe the characteristics of silicon surface fluorine implantation (SSFI) for HfO2 films with high-temperature postdeposition annealing. The thermal stability of HfO2 gate dielectrics is much improved owing to the incorporation of fluorine into HfO2 thin films. The gate leakage current of the SSFI HfO2 films is about three orders less than that of samples without any fluorine implantation. In addition, improvements in stress-induced leakage current (SILC) and charge trapping characteristics are realized in the HfO2 films with the SSFI. The incorporation of fluorine atoms into the HfO2 films reduces not only interface dangling bonds but also bulk traps, which is responsible for the improvements in properties.

原文English
頁(從 - 到)2893-2897
頁數5
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號4 B
DOIs
出版狀態Published - 25 4月 2006

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