The fluorinated amorphous carbon films (a-C:F) films deposited by plasma enhanced chemical vapor deposition (PECVD) achieved a low-dielectric constant and high thermal stability by analyzing film characteristics of a-C:F. Implementation of damascene pattern with 0.15 μm and an etching selectivity of more than 50 (a-C:F/SiOF, SiO2 was done using a mixture of N2+O2 gases. It was shown by scanning electron microscope results that a better etch profile could be obtained at higher bias power. The etching stop layer or hard mask of both SiOF and SiO2 was studied in the damascene architecture.
|頁（從 - 到）||780-787|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||Published - 1 5月 2001|
|事件||13th International Vaccum Microelectronics Conference - Guangzhou, China|
持續時間: 14 8月 2000 → 17 8月 2000