Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

Jia Min Shieh; Shich Chang Suen; Kou Chiang Tsai; Bau Tong Dai; Yew-Chuhg Wu; Yu Hen Wu

doi:10.1116/1.1362683

Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

Jia Min Shieh^*, Shich Chang Suen, Kou Chiang Tsai, Bau Tong Dai, Yew-Chuhg Wu, Yu Hen Wu

^*此作品的通信作者

材料科學與工程學系

研究成果: Conference article › 同行評審

15 引文斯高帕斯（Scopus）

摘要

The fluorinated amorphous carbon films (a-C:F) films deposited by plasma enhanced chemical vapor deposition (PECVD) achieved a low-dielectric constant and high thermal stability by analyzing film characteristics of a-C:F. Implementation of damascene pattern with 0.15 μm and an etching selectivity of more than 50 (a-C:F/SiOF, SiO₂ was done using a mixture of N₂+O₂ gases. It was shown by scanning electron microscope results that a better etch profile could be obtained at higher bias power. The etching stop layer or hard mask of both SiOF and SiO₂ was studied in the damascene architecture.

原文	American English
頁（從 - 到）	780-787
頁數	8
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	19
發行號	3
DOIs	https://doi.org/10.1116/1.1362683
出版狀態	Published - 1 5月 2001
事件	13th International Vaccum Microelectronics Conference - Guangzhou, China 持續時間: 14 8月 2000 → 17 8月 2000

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title = "Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection",

abstract = "The fluorinated amorphous carbon films (a-C:F) films deposited by plasma enhanced chemical vapor deposition (PECVD) achieved a low-dielectric constant and high thermal stability by analyzing film characteristics of a-C:F. Implementation of damascene pattern with 0.15 μm and an etching selectivity of more than 50 (a-C:F/SiOF, SiO2 was done using a mixture of N2+O2 gases. It was shown by scanning electron microscope results that a better etch profile could be obtained at higher bias power. The etching stop layer or hard mask of both SiOF and SiO2 was studied in the damascene architecture.",

author = "Shieh, {Jia Min} and Suen, {Shich Chang} and Tsai, {Kou Chiang} and Dai, {Bau Tong} and Yew-Chuhg Wu and Wu, {Yu Hen}",

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T1 - Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

AU - Shieh, Jia Min

AU - Suen, Shich Chang

AU - Tsai, Kou Chiang

AU - Dai, Bau Tong

AU - Wu, Yew-Chuhg

AU - Wu, Yu Hen

PY - 2001/5/1

Y1 - 2001/5/1

N2 - The fluorinated amorphous carbon films (a-C:F) films deposited by plasma enhanced chemical vapor deposition (PECVD) achieved a low-dielectric constant and high thermal stability by analyzing film characteristics of a-C:F. Implementation of damascene pattern with 0.15 μm and an etching selectivity of more than 50 (a-C:F/SiOF, SiO2 was done using a mixture of N2+O2 gases. It was shown by scanning electron microscope results that a better etch profile could be obtained at higher bias power. The etching stop layer or hard mask of both SiOF and SiO2 was studied in the damascene architecture.

AB - The fluorinated amorphous carbon films (a-C:F) films deposited by plasma enhanced chemical vapor deposition (PECVD) achieved a low-dielectric constant and high thermal stability by analyzing film characteristics of a-C:F. Implementation of damascene pattern with 0.15 μm and an etching selectivity of more than 50 (a-C:F/SiOF, SiO2 was done using a mixture of N2+O2 gases. It was shown by scanning electron microscope results that a better etch profile could be obtained at higher bias power. The etching stop layer or hard mask of both SiOF and SiO2 was studied in the damascene architecture.

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DO - 10.1116/1.1362683

M3 - Conference article

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SN - 1071-1023

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EP - 787

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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T2 - 13th International Vaccum Microelectronics Conference

Y2 - 14 August 2000 through 17 August 2000

ER -

Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm Cu/a-C:F damascene interconnection

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