Characteristics of deep levels in As-implanted GaN films

L. Lee; W. C. Lee; H. M. Chung; M. C. Lee; W. H. Chen; Wei-Kuo Chen; H. Y. Lee

doi:10.1063/1.1499739

Characteristics of deep levels in As-implanted GaN films

L. Lee^*, W. C. Lee, H. M. Chung, M. C. Lee, W. H. Chen, Wei-Kuo Chen, H. Y. Lee

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800°C thermal annealing for 60 min, one additional deep level located at E_C-0.766eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature.

原文	English
頁（從 - 到）	1812-1814
頁數	3
期刊	Applied Physics Letters
卷	81
發行號	10
DOIs	https://doi.org/10.1063/1.1499739
出版狀態	Published - 2 9月 2002

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10.1063/1.1499739

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abstract = "Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800°C thermal annealing for 60 min, one additional deep level located at EC-0.766eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature.",

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AU - Chen, Wei-Kuo

AU - Lee, H. Y.

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N2 - Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800°C thermal annealing for 60 min, one additional deep level located at EC-0.766eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature.

AB - Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800°C thermal annealing for 60 min, one additional deep level located at EC-0.766eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature.

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Characteristics of deep levels in As-implanted GaN films

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