Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers

Hung Pin D. Yang; I. Chen Hsu; Fang I. Lai; Kuo-Jui Lin; Ru Shang Hsiao; Nikolai A. Maleev; Sergej A. Blokhin; Hao-Chung Kuo; Jim Yung Chi

doi:10.1143/JJAP.46.6670

Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers

Hung Pin D. Yang^*, I. Chen Hsu, Fang I. Lai, Kuo-Jui Lin, Ru Shang Hsiao, Nikolai A. Maleev, Sergej A. Blokhin, Hao-Chung Kuo, Jim Yung Chi

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.

原文	English
頁（從 - 到）	6670-6672
頁數	3
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	46
發行號	10A
DOIs	https://doi.org/10.1143/JJAP.46.6670
出版狀態	Published - 9 10月 2007

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Yang, H. P. D., Hsu, I. C., Lai, F. I., Lin, K.-J., Hsiao, R. S., Maleev, N. A., Blokhin, S. A., Kuo, H.-C., & Chi, J. Y. (2007). Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46(10A), 6670-6672. https://doi.org/10.1143/JJAP.46.6670

@article{a3b7708d86854941a75785da29bb1324,

title = "Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers",

abstract = "A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.",

keywords = "Broad-area, Quantum-dot, Submonolayer, VCSEL",

author = "Yang, {Hung Pin D.} and Hsu, {I. Chen} and Lai, {Fang I.} and Kuo-Jui Lin and Hsiao, {Ru Shang} and Maleev, {Nikolai A.} and Blokhin, {Sergej A.} and Hao-Chung Kuo and Chi, {Jim Yung}",

year = "2007",

month = oct,

day = "9",

doi = "10.1143/JJAP.46.6670",

language = "English",

volume = "46",

pages = "6670--6672",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10A",

}

Yang, HPD, Hsu, IC, Lai, FI, Lin, K-J, Hsiao, RS, Maleev, NA, Blokhin, SA, Kuo, H-C & Chi, JY 2007, 'Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 卷 46, 編號 10A, 頁 6670-6672. https://doi.org/10.1143/JJAP.46.6670

TY - JOUR

T1 - Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers

AU - Yang, Hung Pin D.

AU - Hsu, I. Chen

AU - Lai, Fang I.

AU - Lin, Kuo-Jui

AU - Hsiao, Ru Shang

AU - Maleev, Nikolai A.

AU - Blokhin, Sergej A.

AU - Kuo, Hao-Chung

AU - Chi, Jim Yung

PY - 2007/10/9

Y1 - 2007/10/9

N2 - A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.

AB - A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.

KW - Broad-area

KW - Quantum-dot

KW - Submonolayer

KW - VCSEL

UR - http://www.scopus.com/inward/record.url?scp=35348860094&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.6670

DO - 10.1143/JJAP.46.6670

M3 - Article

AN - SCOPUS:35348860094

SN - 0021-4922

VL - 46

SP - 6670

EP - 6672

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10A

ER -

Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers

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