Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers

Hung Pin D. Yang*, I. Chen Hsu, Fang I. Lai, Kuo-Jui Lin, Ru Shang Hsiao, Nikolai A. Maleev, Sergej A. Blokhin, Hao-Chung Kuo, Jim Yung Chi

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.

原文English
頁(從 - 到)6670-6672
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
發行號10A
DOIs
出版狀態Published - 9 10月 2007

指紋

深入研究「Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers」主題。共同形成了獨特的指紋。

引用此