跳至主導覽
跳至搜尋
跳過主要內容
國立陽明交通大學研發優勢分析平台 首頁
English
中文
首頁
人員
單位
研究成果
計畫
獎項
活動
貴重儀器
影響
按專業知識、姓名或所屬機構搜尋
Characteristics of Boron Diffusion in Polysilicon/Silicon Systems with a Thin Si-B Layer as Diffusion Source
T. P. Chen, T. F. Lei,
Horng-Chih Lin
, C. Y. Chang
電子研究所
研究成果
:
Article
›
同行評審
5
引文 斯高帕斯(Scopus)
總覽
指紋
指紋
深入研究「Characteristics of Boron Diffusion in Polysilicon/Silicon Systems with a Thin Si-B Layer as Diffusion Source」主題。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Polysilicon
100%
Diffuse Sources
100%
Boron Diffusion
100%
Silicon Substrate
22%
Drive-in
22%
Diffusion Profile
22%
Depositional System
11%
Cross-sectional Transmission Electron Microscopy
11%
High Vacuum Chemical Vapor Deposition
11%
Grain Size
11%
Shallow Junction
11%
Thermal Oxidation
11%
Thermal Budget
11%
Secondary Ion Mass Spectrometry
11%
Oxygen Impurity
11%
Boron
11%
Surface Concentration
11%
Junction-less
11%
Hydrofluoric Acid
11%
Junction Depth
11%
Secondary Grain Growth
11%
Small Surfaces
11%
Gettering
11%
Material Science
Silicon
100%
Boron
100%
Oxidation Reaction
50%
Transmission Electron Microscopy
16%
Chemical Vapor Deposition
16%
Grain Size
16%
Secondary Ion Mass Spectrometry
16%
Gettering
16%
Surface (Surface Science)
16%
Engineering
Polysilicon
100%
Silicon Substrate
22%
Deposition System
11%
Chemical Vapor Deposition
11%
Vapor Deposition
11%
Shallow Junction
11%
Thermal Oxidation
11%
Junction Depth
11%
Surface Concentration
11%
Biochemistry, Genetics and Molecular Biology
Facilitated Diffusion
100%
Transmission Electron Microscopy
16%
Secondary Ion Mass Spectrometry
16%
Particle Size
16%
Drive
16%
Chemical Engineering
Polysilicon
100%
Vapor Deposition
11%
Chemical Vapor Deposition
11%
Hydrofluoric Acid
11%