Characteristics of a photonic bandgap single defect microcavity electroluminescent device

W. D. Zhou; J. Sabarinathan; P. Bhattarcharya; B. Kochman; E. W. Berg; Peichen Yu; S. W. Pang

doi:10.1109/3.945320

Characteristics of a photonic bandgap single defect microcavity electroluminescent device

W. D. Zhou^*, J. Sabarinathan, P. Bhattarcharya, B. Kochman, E. W. Berg, Peichen Yu, S. W. Pang

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

66 引文斯高帕斯（Scopus）

摘要

A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In_0.15 Ga_0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.

原文	English
頁（從 - 到）	1153-1160
頁數	8
期刊	IEEE Journal of Quantum Electronics
卷	37
發行號	9
DOIs	https://doi.org/10.1109/3.945320
出版狀態	Published - 1 9月 2001

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title = "Characteristics of a photonic bandgap single defect microcavity electroluminescent device",

abstract = "A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- {\AA} compressively strained In0.15 Ga0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.",

keywords = "Defect mode, Microcavity, Photonic bandgap, Surface emitting",

author = "Zhou, {W. D.} and J. Sabarinathan and P. Bhattarcharya and B. Kochman and Berg, {E. W.} and Peichen Yu and Pang, {S. W.}",

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AU - Zhou, W. D.

AU - Sabarinathan, J.

AU - Bhattarcharya, P.

AU - Kochman, B.

AU - Berg, E. W.

AU - Yu, Peichen

AU - Pang, S. W.

PY - 2001/9/1

Y1 - 2001/9/1

N2 - A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In0.15 Ga0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.

AB - A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting of a GaAs-based heterostructure. The gain region consists of two 70- Å compressively strained In0.15 Ga0.85 As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 μW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor β ≈ 0.06.

KW - Defect mode

KW - Microcavity

KW - Photonic bandgap

KW - Surface emitting

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JO - IEEE Journal of Quantum Electronics

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Characteristics of a photonic bandgap single defect microcavity electroluminescent device

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