Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate

Tian-Li Wu*, Chih Fang Huang, Chun Hu Cheng

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.

原文English
主出版物標題Wide Bandgap Semiconductor Materials and Devices 12
頁面173-183
頁數11
版本6
DOIs
出版狀態Published - 1 8月 2011
事件Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada
持續時間: 1 5月 20116 5月 2011

出版系列

名字ECS Transactions
號碼6
35
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting
國家/地區Canada
城市Montreal, QC
期間1/05/116/05/11

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