Characteristics of 1.3 μm InGaNAs light-emitting diodes

Hung Pin D. Yang, Chen Ming Lu, Daniil Livchits, Kuo-Jui Lin, I. Fan Chen, Tsin Dong Lee, Jim Y. Chi

研究成果: Conference contribution同行評審

摘要

We have made InGaNAs light-emitting diodes for fiber-optic applications at 1.3 μm. The epitaxial layers grown on the n-GaAs substrates in a MOCVD system P-type metal grid lines were formed on the light-emitting aperture for current spreading. A maximum optical power of 0.84 mW was measured at 300 mA. The device characteristics were measured and analyzed.

原文English
主出版物標題CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
主出版物子標題Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁數1
ISBN(電子)0780377664
DOIs
出版狀態Published - 1 1月 2003
事件5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan
持續時間: 15 12月 200319 12月 2003

出版系列

名字Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
2

Conference

Conference5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
國家/地區Taiwan
城市Taipei
期間15/12/0319/12/03

指紋

深入研究「Characteristics of 1.3 μm InGaNAs light-emitting diodes」主題。共同形成了獨特的指紋。

引用此