Characteristics imrovement for flexible a-Si:H thin film transistor with post treatment processes

Li Feng Teng*, Po-Tsun Liu, Yi Teh Chou, Yang Shun Fan

*此作品的通信作者

研究成果: Paper同行評審

摘要

The performances of flexible a-Si:H TFTs on stainless foil with and without silicon nitride passivation layer were discussed in this study. The experiment results indicated the reliability of a-Si:H TFTs with passivation layer under mechanical strains was improved. That's related to the hydrogen passivating effect during deposition and post-annealing process.

原文English
頁面2207-2209
頁數3
出版狀態Published - 1 12月 2010
事件17th International Display Workshops, IDW'10 - Fukuoka, Japan
持續時間: 1 12月 20103 12月 2010

Conference

Conference17th International Display Workshops, IDW'10
國家/地區Japan
城市Fukuoka
期間1/12/103/12/10

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