Characteristics imrovement for flexible a-Si:H thin film transistor with post treatment processes

Li Feng Teng; Po-Tsun Liu; Yi Teh Chou; Yang Shun Fan

Characteristics imrovement for flexible a-Si:H thin film transistor with post treatment processes

Li Feng Teng^*, Po-Tsun Liu, Yi Teh Chou, Yang Shun Fan

^*此作品的通信作者

光電工程學系

研究成果: Paper › 同行評審

摘要

The performances of flexible a-Si:H TFTs on stainless foil with and without silicon nitride passivation layer were discussed in this study. The experiment results indicated the reliability of a-Si:H TFTs with passivation layer under mechanical strains was improved. That's related to the hydrogen passivating effect during deposition and post-annealing process.

原文	English
頁面	2207-2209
頁數	3
出版狀態	Published - 1 12月 2010
事件	17th International Display Workshops, IDW'10 - Fukuoka, Japan 持續時間: 1 12月 2010 → 3 12月 2010

Conference

Conference	17th International Display Workshops, IDW'10
國家/地區	Japan
城市	Fukuoka
期間	1/12/10 → 3/12/10

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引用此

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title = "Characteristics imrovement for flexible a-Si:H thin film transistor with post treatment processes",

abstract = "The performances of flexible a-Si:H TFTs on stainless foil with and without silicon nitride passivation layer were discussed in this study. The experiment results indicated the reliability of a-Si:H TFTs with passivation layer under mechanical strains was improved. That's related to the hydrogen passivating effect during deposition and post-annealing process.",

author = "Teng, {Li Feng} and Po-Tsun Liu and Chou, {Yi Teh} and Fan, {Yang Shun}",

year = "2010",

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language = "English",

pages = "2207--2209",

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T1 - Characteristics imrovement for flexible a-Si:H thin film transistor with post treatment processes

AU - Teng, Li Feng

AU - Liu, Po-Tsun

AU - Chou, Yi Teh

AU - Fan, Yang Shun

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The performances of flexible a-Si:H TFTs on stainless foil with and without silicon nitride passivation layer were discussed in this study. The experiment results indicated the reliability of a-Si:H TFTs with passivation layer under mechanical strains was improved. That's related to the hydrogen passivating effect during deposition and post-annealing process.

AB - The performances of flexible a-Si:H TFTs on stainless foil with and without silicon nitride passivation layer were discussed in this study. The experiment results indicated the reliability of a-Si:H TFTs with passivation layer under mechanical strains was improved. That's related to the hydrogen passivating effect during deposition and post-annealing process.

UR - http://www.scopus.com/inward/record.url?scp=79956296699&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956296699

SP - 2207

EP - 2209

Y2 - 1 December 2010 through 3 December 2010

ER -

Characteristics imrovement for flexible a-Si:H thin film transistor with post treatment processes

摘要

Conference

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