摘要
The characteristics and the reliability of the laser-involved activation for both solid phase crystallization (SPC) and laser crystallization (LC) channel films were examined. The effective trap state density calculated from typical I-V curves was compared for laser-activated and furnace-activated thin film transistors (TFT). The results demonstrated that after laser activation, leakage current becomes larger and more trap state density is generated near drain side especially for LC channel films.
原文 | English |
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頁(從 - 到) | 1926-1932 |
頁數 | 7 |
期刊 | Journal of Applied Physics |
卷 | 93 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 15 2月 2003 |