Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors

Du Zen Peng*, Ting Chang Chang, Chun Yen Chang, Ming Liang Tsai, Chun Hao Tu, Po-Tsun Liu

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The characteristics and the reliability of the laser-involved activation for both solid phase crystallization (SPC) and laser crystallization (LC) channel films were examined. The effective trap state density calculated from typical I-V curves was compared for laser-activated and furnace-activated thin film transistors (TFT). The results demonstrated that after laser activation, leakage current becomes larger and more trap state density is generated near drain side especially for LC channel films.

原文English
頁(從 - 到)1926-1932
頁數7
期刊Journal of Applied Physics
93
發行號4
DOIs
出版狀態Published - 15 2月 2003

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