Characteristics and mechanisms of silicon-oxide-based resistance random access memory

Kuan Chang Chang; Tsung Ming Tsai; Ting Chang Chang; Hsing Hua Wu; Jung Hui Chen; Yong En Syu; Geng Wei Chang; Tian Jian Chu; Guan Ru Liu; Yu Ting Su; Min Chen Chen; Jhih Hong Pan; Jian Yu Chen; Cheng Wei Tung; Hui Chun Huang; Ya-Hsiang Tai; Der Shin Gan; Simon M. Sze

doi:10.1109/LED.2013.2241725

Characteristics and mechanisms of silicon-oxide-based resistance random access memory

Kuan Chang Chang^*, Tsung Ming Tsai, Ting Chang Chang, Hsing Hua Wu, Jung Hui Chen, Yong En Syu, Geng Wei Chang, Tian Jian Chu, Guan Ru Liu, Yu Ting Su, Min Chen Chen, Jhih Hong Pan, Jian Yu Chen, Cheng Wei Tung, Hui Chun Huang, Ya-Hsiang Tai, Der Shin Gan, Simon M. Sze

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

63 引文斯高帕斯（Scopus）

摘要

Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.

原文	English
文章編號	6461910
頁（從 - 到）	399-401
頁數	3
期刊	Ieee Electron Device Letters
卷	34
發行號	3
DOIs	https://doi.org/10.1109/LED.2013.2241725
出版狀態	Published - 2013

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Chang, K. C., Tsai, T. M., Chang, T. C., Wu, H. H., Chen, J. H., Syu, Y. E., Chang, G. W., Chu, T. J., Liu, G. R., Su, Y. T., Chen, M. C., Pan, J. H., Chen, J. Y., Tung, C. W., Huang, H. C., Tai, Y.-H., Gan, D. S., & Sze, S. M. (2013). Characteristics and mechanisms of silicon-oxide-based resistance random access memory. Ieee Electron Device Letters, 34(3), 399-401. 文章 6461910. https://doi.org/10.1109/LED.2013.2241725

@article{4a0e9d12006c46bf8ea61b7e31fc694f,

title = "Characteristics and mechanisms of silicon-oxide-based resistance random access memory",

abstract = "Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.",

keywords = "Filament, Zn, resistive switch, silicon oxide",

author = "Chang, {Kuan Chang} and Tsai, {Tsung Ming} and Chang, {Ting Chang} and Wu, {Hsing Hua} and Chen, {Jung Hui} and Syu, {Yong En} and Chang, {Geng Wei} and Chu, {Tian Jian} and Liu, {Guan Ru} and Su, {Yu Ting} and Chen, {Min Chen} and Pan, {Jhih Hong} and Chen, {Jian Yu} and Tung, {Cheng Wei} and Huang, {Hui Chun} and Ya-Hsiang Tai and Gan, {Der Shin} and Sze, {Simon M.}",

year = "2013",

doi = "10.1109/LED.2013.2241725",

language = "English",

volume = "34",

pages = "399--401",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

Chang, KC, Tsai, TM, Chang, TC, Wu, HH, Chen, JH, Syu, YE, Chang, GW, Chu, TJ, Liu, GR, Su, YT, Chen, MC, Pan, JH, Chen, JY, Tung, CW, Huang, HC, Tai, Y-H, Gan, DS & Sze, SM 2013, 'Characteristics and mechanisms of silicon-oxide-based resistance random access memory', Ieee Electron Device Letters, 卷 34, 編號 3, 6461910, 頁 399-401. https://doi.org/10.1109/LED.2013.2241725

TY - JOUR

T1 - Characteristics and mechanisms of silicon-oxide-based resistance random access memory

AU - Chang, Kuan Chang

AU - Tsai, Tsung Ming

AU - Chang, Ting Chang

AU - Wu, Hsing Hua

AU - Chen, Jung Hui

AU - Syu, Yong En

AU - Chang, Geng Wei

AU - Chu, Tian Jian

AU - Liu, Guan Ru

AU - Su, Yu Ting

AU - Chen, Min Chen

AU - Pan, Jhih Hong

AU - Chen, Jian Yu

AU - Tung, Cheng Wei

AU - Huang, Hui Chun

AU - Tai, Ya-Hsiang

AU - Gan, Der Shin

AU - Sze, Simon M.

PY - 2013

Y1 - 2013

N2 - Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.

AB - Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.

KW - Filament

KW - Zn

KW - resistive switch

KW - silicon oxide

UR - http://www.scopus.com/inward/record.url?scp=84874653064&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2241725

DO - 10.1109/LED.2013.2241725

M3 - Article

AN - SCOPUS:84874653064

SN - 0741-3106

VL - 34

SP - 399

EP - 401

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 3

M1 - 6461910

ER -

Characteristics and mechanisms of silicon-oxide-based resistance random access memory

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