Characteristic optimization of single- and double-gate tunneling field effect transistors

Kuo Fu Lee*, Yiming Li, Chun Yen Yiu, Zhong Cheng Su, I. Shiu Lo, Hui Wen Cheng, Ming Hung Han, Thet Thet Khaing

*此作品的通信作者

研究成果: Conference contribution同行評審

4 引文 斯高帕斯(Scopus)

摘要

Optimal single- and double-gate tunneling field-effect transistor (TFET) with a structure of p++ source, intrinsic channel and n+ drain region are explored. Two-dimensional device simulation is adopted to assess device characteristic influenced by the source doping, the channel doping and the thickness of junction overlap between the source and gate. The result of this study shows that the source doping and junction overlap significantly affect the drain current (ID). Then, we compare the single- and double-gate TFETs with the optimized parameters, where the junction overlap is 6 nm, the source doping is 1022 cm3, and the intrinsic channel doping. For the explored double-gate TFET, a steeper subthreshold slope (SS) of 32 mV/dec and a higher on/off current ratio (Ion/Ioff) of 5×10 9 are obtained, compared with the single-gate device.

原文English
主出版物標題Nanotechnology 2010
主出版物子標題Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
頁面65-68
頁數4
出版狀態Published - 1月 2010
事件Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 - Anaheim, CA, United States
持續時間: 21 6月 201024 6月 2010

出版系列

名字Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
2

Conference

ConferenceNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
國家/地區United States
城市Anaheim, CA
期間21/06/1024/06/10

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