Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperature

Yiming Li, Chih Hong Hwang, Shao Ming Yu, Hsuan Ming Huang, Ta Ching Yeh, Hui Wen Cheng, Hung Ming Chen, Jiunn Ren Hwang, Fu Liang Yang

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this paper, we numerically study the discrete-dopant-induced characteristic fluctuations in 16nm silicon-on-insulator (SOI) FinFETs. For devices under different temperature condition, discrete dopants are statistically generated and positioned into the three-dimensional channel region to examine associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". Electrical characteristics' fluctuations are growing worse when the substrate temperature increases, the standard deviation of threshold voltage increases 1.75 times when substrate temperature increases from 300K to 400K for example. This "atomistic" device simulation technique is computationally cost-effective and provides us an insight into the problem of discrete-dopant-induced fluctuation and the relation between the fluctuation and thermal effect.

原文English
主出版物標題2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
發行者Springer-Verlag Wien
頁面365-368
頁數4
ISBN(列印)9783211728604
DOIs
出版狀態Published - 2007
事件12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria
持續時間: 25 九月 200727 九月 2007

出版系列

名字2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Conference

Conference12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
國家/地區Austria
城市Vienna
期間25/09/0727/09/07

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