Characteristic comparison of SRAM cells with 20 nm planar MOSFET, omega FinFET and nanowire FinFET

Yi-Ming Li*, Chien Sung Lu

*此作品的通信作者

研究成果: Conference contribution同行評審

9 引文 斯高帕斯(Scopus)

摘要

In this paper, we study the performance of SRAM cell with three different devices, conventional planar MOSFETs, omega FinFETs, and nanowire FinFETs. Static noise margin (SNM) of 6T SRAM is computational investigated and compared by using a three-dimensional mixed-mode device-circuit coupled simulation with considering quantum mechanical effects. We firstly analyze and compare the terminal characteristics, the curves of ID-VG and I D-VD for the explored 20 nm transistors in SRAM cells. The SNM of SRAM during both hold and read modes is explored for the device with respect to different supply voltage and temperature. Effect of the channel length on the SNM and fluctuation of SNM is further investigated by using a computational statistics technique. Among three devices in the 6T SRAM cell, it is found that 6T SRAM cell with 20 nm nanowire FinFETs possesses the best and stable operation characteristics. SRAM cell fabricated with multiple-gate FinFETs is promising in sub-22 nm CMOS devices.

原文English
主出版物標題2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
頁面339-342
頁數4
出版狀態Published - 2006
事件2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006 - Cincinnati, OH, United States
持續時間: 17 六月 200620 六月 2006

出版系列

名字2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
1

Conference

Conference2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006
國家/地區United States
城市Cincinnati, OH
期間17/06/0620/06/06

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