CHARACTERISATIONS AND DESIGN CONSIDERATIONS OF LAMBDA BIPOLAR TRANSISTOR (LBT).

Chung-Yu Wu*, Ching Yuan Wu

*此作品的通信作者

    研究成果: Article同行評審

    5 引文 斯高帕斯(Scopus)

    摘要

    A novel integrated LAMBDA -type voltage-controlled negative-differential-resistance device consisting of a bipolar-junction transistor merged with a metal-oxide-semiconductor field-effect transistor, which has been called the lambda bipolar transistor (LBT), is studied. By considering the effects of the current gain degradation, the dc model of the device is constructed, and the important device parameters such as the peak point, the negative resistance, and the valley point, are characterized. Based on the dc model and the small signal behavior of the LBT, the optimal device design considerations for micropower LBT ICs are presented. The temperature stability of the LBT is also investigated.

    原文English
    頁(從 - 到)73-80
    頁數8
    期刊IEE Proceedings I: Solid State and Electron Devices
    128
    發行號3
    DOIs
    出版狀態Published - 6月 1981

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