Channel thickness effect on high-frequency performance of poly-Si thin-film transistors

Kun Ming Chen; Tzu I. Tsai; Ting Yao Lin; Horng-Chih Lin; Tien-Sheng Chao; Guo Wei Huang; Tiao Yuan Huang

doi:10.1109/LED.2013.2267809

Channel thickness effect on high-frequency performance of poly-Si thin-film transistors

Kun Ming Chen, Tzu I. Tsai, Ting Yao Lin, Horng-Chih Lin, Tien-Sheng Chao, Guo Wei Huang, Tiao Yuan Huang

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μ m. Owing to the short gate length and adoption of salicide process, cutoff frequency (f_T) of 17 GHz and maximum oscillation frequency of ∼ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of f_T with channel thickness is mainly due to the change in transconductance.

原文	English
文章編號	6553156
頁（從 - 到）	1020-1022
頁數	3
期刊	Ieee Electron Device Letters
卷	34
發行號	8
DOIs	https://doi.org/10.1109/LED.2013.2267809
出版狀態	Published - 2013

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10.1109/LED.2013.2267809

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@article{f18f1d4dc3a64cd49ea9cf2111d20fad,

title = "Channel thickness effect on high-frequency performance of poly-Si thin-film transistors",

abstract = "In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μ m. Owing to the short gate length and adoption of salicide process, cutoff frequency (fT) of 17 GHz and maximum oscillation frequency of ∼ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of fT with channel thickness is mainly due to the change in transconductance.",

keywords = "Channel thickness, gate length, radio frequency, thin-film transistors (TFTs), transconductance",

author = "Chen, {Kun Ming} and Tsai, {Tzu I.} and Lin, {Ting Yao} and Horng-Chih Lin and Tien-Sheng Chao and Huang, {Guo Wei} and Huang, {Tiao Yuan}",

year = "2013",

doi = "10.1109/LED.2013.2267809",

language = "English",

volume = "34",

pages = "1020--1022",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Channel thickness effect on high-frequency performance of poly-Si thin-film transistors

AU - Chen, Kun Ming

AU - Tsai, Tzu I.

AU - Lin, Ting Yao

AU - Lin, Horng-Chih

AU - Chao, Tien-Sheng

AU - Huang, Guo Wei

AU - Huang, Tiao Yuan

PY - 2013

Y1 - 2013

N2 - In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μ m. Owing to the short gate length and adoption of salicide process, cutoff frequency (fT) of 17 GHz and maximum oscillation frequency of ∼ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of fT with channel thickness is mainly due to the change in transconductance.

AB - In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μ m. Owing to the short gate length and adoption of salicide process, cutoff frequency (fT) of 17 GHz and maximum oscillation frequency of ∼ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of fT with channel thickness is mainly due to the change in transconductance.

KW - Channel thickness

KW - gate length

KW - radio frequency

KW - thin-film transistors (TFTs)

KW - transconductance

UR - http://www.scopus.com/inward/record.url?scp=84881030468&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2267809

DO - 10.1109/LED.2013.2267809

M3 - Article

AN - SCOPUS:84881030468

SN - 0741-3106

VL - 34

SP - 1020

EP - 1022

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 8

M1 - 6553156

ER -

Channel thickness effect on high-frequency performance of poly-Si thin-film transistors

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