Channel film thickness effect of low-temperature polycrystalline-silicon thin-film transistors

William Cheng Yu Ma, Tsung Yu Chiang, Chi Ruei Yeh, Tien-Sheng Chao, Tan Fu Lei

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

In this paper, the channel-film-thickness effect of low-temperature polycrystalline-Si thin-film transistors (LTPS-TFTs) is investigated. Greater channel film thickness can provide a higher field-effect mobility μ FE , rising from 14.33 to 22.33 cm 2 /V · s, as the channel film thickness increases from 55 to 120 nm, due to grain-size effect. In addition, varying the channel film thickness of LTPS-TFTs results in different junction leakage current due to the source/drain (S/D) junction area effect. Moreover, the S/D series resistance also significantly increases when the channel film thickness is reduced from 120 to 35 nm, leading to poor field-effect mobility μ FE and driving current. Consequently, the optimum channel film thickness for active-matrix liquid-crystal displays may be identified.

原文English
文章編號5723733
頁(從 - 到)1268-1272
頁數5
期刊IEEE Transactions on Electron Devices
58
發行號4
DOIs
出版狀態Published - 1 四月 2011

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