Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si

Ling Lee; Wen Chung Fan; Jui Tai Ku; Wen-Hao Chang; Wei-Kuo Chen; Wu-Ching Chou; Chih Hsin Ko; Cheng Hsien Wu; You Ru Lin; Clement H. Wann; Chao Wei Hsu; Yung Feng Chen; Yan Kuin Su

doi:10.1088/0957-4484/21/46/465701

Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si

Ling Lee^*, Wen Chung Fan, Jui Tai Ku, Wen-Hao Chang, Wei-Kuo Chen, Wu-Ching Chou, Chih Hsin Ko, Cheng Hsien Wu, You Ru Lin, Clement H. Wann, Chao Wei Hsu, Yung Feng Chen, Yan Kuin Su

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.

原文	English
文章編號	465701
頁（從 - 到）	1-5
頁數	5
期刊	Nanotechnology
卷	21
發行號	46
DOIs	https://doi.org/10.1088/0957-4484/21/46/465701
出版狀態	Published - 19 11月 2010

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10.1088/0957-4484/21/46/465701

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title = "Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si",

abstract = "The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.",

author = "Ling Lee and Fan, {Wen Chung} and Ku, {Jui Tai} and Wen-Hao Chang and Wei-Kuo Chen and Wu-Ching Chou and Ko, {Chih Hsin} and Wu, {Cheng Hsien} and Lin, {You Ru} and Wann, {Clement H.} and Hsu, {Chao Wei} and Chen, {Yung Feng} and Su, {Yan Kuin}",

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doi = "10.1088/0957-4484/21/46/465701",

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T1 - Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si

AU - Lee, Ling

AU - Fan, Wen Chung

AU - Ku, Jui Tai

AU - Chang, Wen-Hao

AU - Chen, Wei-Kuo

AU - Chou, Wu-Ching

AU - Ko, Chih Hsin

AU - Wu, Cheng Hsien

AU - Lin, You Ru

AU - Wann, Clement H.

AU - Hsu, Chao Wei

AU - Chen, Yung Feng

AU - Su, Yan Kuin

PY - 2010/11/19

Y1 - 2010/11/19

N2 - The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.

AB - The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.

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AN - SCOPUS:78650139553

SN - 0957-4484

VL - 21

SP - 1

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JO - Nanotechnology

JF - Nanotechnology

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M1 - 465701

ER -

Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si

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