Catalyst-free ZnO nanowires grown on a-plane GaN

C. W. Chen, C. J. Pan, F. C. Tsao, Y. L. Liu, C. W. Kuo, Cheng-Huang Kuo, G. C. Chi, P. H. Chen, W. C. Lai, T. H. Hsueh, C. J. Tun, C. Y. Chang, S. J. Pearton*, F. Ren


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8 引文 斯高帕斯(Scopus)


ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)ZnO||(110)GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.

頁(從 - 到)803-806
出版狀態Published - 4 2月 2010


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