Catalyst-free ZnO nanowires grown on a-plane GaN

C. W. Chen; C. J. Pan; F. C. Tsao; Y. L. Liu; C. W. Kuo; Cheng-Huang Kuo; G. C. Chi; P. H. Chen; W. C. Lai; T. H. Hsueh; C. J. Tun; C. Y. Chang; S. J. Pearton; F. Ren

doi:10.1016/j.vacuum.2009.10.043

Catalyst-free ZnO nanowires grown on a-plane GaN

C. W. Chen, C. J. Pan, F. C. Tsao, Y. L. Liu, C. W. Kuo, Cheng-Huang Kuo, G. C. Chi, P. H. Chen, W. C. Lai, T. H. Hsueh, C. J. Tun, C. Y. Chang, S. J. Pearton^*, F. Ren

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)_ZnO||(110)_GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.

原文	English
頁（從 - 到）	803-806
頁數	4
期刊	Vacuum
卷	84
發行號	6
DOIs	https://doi.org/10.1016/j.vacuum.2009.10.043
出版狀態	Published - 4 2月 2010

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title = "Catalyst-free ZnO nanowires grown on a-plane GaN",

abstract = "ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)ZnO||(110)GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.",

keywords = "ZnO nanowires",

author = "Chen, {C. W.} and Pan, {C. J.} and Tsao, {F. C.} and Liu, {Y. L.} and Kuo, {C. W.} and Cheng-Huang Kuo and Chi, {G. C.} and Chen, {P. H.} and Lai, {W. C.} and Hsueh, {T. H.} and Tun, {C. J.} and Chang, {C. Y.} and Pearton, {S. J.} and F. Ren",

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T1 - Catalyst-free ZnO nanowires grown on a-plane GaN

AU - Chen, C. W.

AU - Pan, C. J.

AU - Tsao, F. C.

AU - Liu, Y. L.

AU - Kuo, C. W.

AU - Kuo, Cheng-Huang

AU - Chi, G. C.

AU - Chen, P. H.

AU - Lai, W. C.

AU - Hsueh, T. H.

AU - Tun, C. J.

AU - Chang, C. Y.

AU - Pearton, S. J.

AU - Ren, F.

PY - 2010/2/4

Y1 - 2010/2/4

N2 - ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)ZnO||(110)GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.

AB - ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)ZnO||(110)GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.

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DO - 10.1016/j.vacuum.2009.10.043

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EP - 806

JO - Vacuum

JF - Vacuum

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Catalyst-free ZnO nanowires grown on a-plane GaN

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