@inproceedings{b8e2be769a0347fcabfaa93292ceefbf,
title = "Cascode GaN HEMT Gate Driving Analysis",
abstract = "The aim of this paper is to analyze the conventional cascode gate driving to understand the switching transition and to provide a design guide for the GaN HEMT and its associated packaging. A double-pulse tester has been designed and fabricated with minimum parasitic inductance to avoid unnecessary parasitic ringing. The switching behaviors in both turn-on and -off are analyzed through topological study and explained through SPICE simulation. Two different cascode devices were tested to show the impact of threshold voltage and low-voltage Si MOSFET selection.",
keywords = "Cascode GaN, Gate driving, HEMT",
author = "Vanessa Heumesser and Lai, {Jih Sheng} and Hsieh, {Hsin Che} and Johnny Hsu and Yang, {Chih Yi} and Chang, {Edward Y.} and Liu, {Ching Yao} and Chieng, {Wei Hua} and Hsieh, {Yueh Tsung}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2023 ; Conference date: 27-08-2023 Through 29-08-2023",
year = "2023",
doi = "10.1109/WiPDAAsia58218.2023.10261905",
language = "English",
series = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "WiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia",
address = "美國",
}