Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Shih Wei Feng; C. C. Pan; Jen Inn Chyi; Chien-Nan Kuo; Kuei Hsien Chen

doi:10.1002/pssc.200674825

Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Shih Wei Feng^*, C. C. Pan, Jen Inn Chyi, Chien-Nan Kuo, Kuei Hsien Chen

^*此作品的通信作者

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.

原文	English
頁（從 - 到）	2716-2719
頁數	4
期刊	Physica Status Solidi (C) Current Topics in Solid State Physics
卷	4
發行號	7
DOIs	https://doi.org/10.1002/pssc.200674825
出版狀態	Published - 1 12月 2007
事件	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, 日本持續時間: 22 10月 2006 → 27 10月 2006

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10.1002/pssc.200674825

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title = "Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence",

abstract = "Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.",

author = "Feng, {Shih Wei} and Pan, {C. C.} and Chyi, {Jen Inn} and Chien-Nan Kuo and Chen, {Kuei Hsien}",

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AU - Feng, Shih Wei

AU - Pan, C. C.

AU - Chyi, Jen Inn

AU - Kuo, Chien-Nan

AU - Chen, Kuei Hsien

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.

AB - Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.

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U2 - 10.1002/pssc.200674825

DO - 10.1002/pssc.200674825

M3 - Conference article

AN - SCOPUS:49749131935

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VL - 4

SP - 2716

EP - 2719

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7

T2 - International Workshop on Nitride Semiconductors, IWN 2006

Y2 - 22 October 2006 through 27 October 2006

ER -

Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

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