Carrier recombination through donors/acceptors in heavily doped silicon

Chen-Ming Hu*, William G. Oldham

*此作品的通信作者

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

Carrier recombination in heavily doped semiconductors via shallow donor or acceptor states is analyzed. The results are in general agreement with experimental lifetime observations including the 1/n20 or 1/P20 dependence, and the insensitivity to temperature and to the dopant used. Capture cross sections of about 10-20 cm 2 needed to fit the lifetime data are reasonable for neutral traps and are consistent with low-temperature capture cross sections reported for shallow dopants.

原文English
頁(從 - 到)636-639
頁數4
期刊Applied Physics Letters
35
發行號8
DOIs
出版狀態Published - 1 12月 1979

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