Carrier-Induced Defect Saturation in Green InGaN LEDs: A Potential Phenomenon to Enhance Efficiency at Higher Wavelength Regime

Keyphrases

• Carrier-induced 100%
• Capacitance-voltage 100%
• GaN-based LED 100%
• Induced Defects 100%
• Quantum Well 66%
• High Bias 66%
• Circuit Model 33%
• Frequency Dependence 33%
• Energy Levels 33%
• Conductance 33%
• Banded Structure 33%
• Voltage Measurement 33%
• Voltage Characteristics 33%
• Frequency Dependent Capacitance 33%
• Time Dynamics 33%
• Steady State 33%
• Carrier Injection 33%
• Non-radial 33%
• Poisson Equation 33%
• Rate Equations 33%
• Schrödinger Equation 33%
• Correction Term 33%
• Negative Capacitance 33%
• Defect Effect 33%
• Voltage Response 33%
• Response-adapted 33%
• Analytical Calculation 33%
• RC Circuit 33%
• InGaN QWs 33%
• Differential Rate 33%
• Radiative Defects 33%
• RC Model 33%

Engineering

• Quantum Well 100%
• Induced Defect 100%
• Circuit Model 50%
• Band Structure 50%
• Rate Equation 50%
• Correction Term 50%
• Schr Dinger Equation 50%
• Electrical Measurement 50%