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Carrier dynamics of Mg-doped indium nitride
Hyeyoung Ahn
*
, C. C. Hong, Y. L. Hong, S. Gwo
*
此作品的通信作者
光電工程學系
研究成果
:
Conference contribution
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深入研究「Carrier dynamics of Mg-doped indium nitride」主題。共同形成了獨特的指紋。
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Keyphrases
Carrier Density
100%
Carrier Dynamics
100%
Mg Doping
100%
Indium Nitride
100%
Terahertz Emission
37%
Mg Films
37%
Density Dependence
25%
Spatial Separation
25%
Strong Dependence
12%
Decay Time
12%
Cm(III)
12%
Doping Level
12%
Undoped
12%
Time-resolved
12%
Photocarriers
12%
Reflectivity
12%
Slow Decay
12%
Strong Emission
12%
Temporal Evolution
12%
Diffusion Current
12%
Drift Current
12%
Optical Reflectivity
12%
Filling Process
12%
Mg-doped InN
12%
Terahertz Radiation
12%
Terahertz Wave
12%
Reflectivity Measurement
12%
Emission Mechanism
12%
Band Filling
12%
Decay Time Constant
12%
Bandgap Renormalization
12%
Recovery of Reflectivity
12%
Intense Terahertz Radiation
12%
Earth and Planetary Sciences
Emissions
100%
Nitride
100%
Indium
100%
Reflectance
75%
Density Dependence
50%
Time Constant
25%
Temporal Evolution
25%
Energy Gaps (Solid State)
25%
Material Science
Indium
100%
Nitride Compound
100%
Carrier Concentration
100%
Film
37%
Reflectivity
37%
Biochemistry, Genetics and Molecular Biology
Dynamics
100%
Facilitated Diffusion
66%
Terahertz Radiation
66%
Decay Time Constant
33%
Optics
33%