Carrier dynamics in Zn x Cd 1-x O films grown by molecular beam epitaxy

F. J. Cheng; Y. C. Lee; S. Y. Hu; Y. C. Lin; K. K. Tiong; Wu-Ching Chou

doi:10.1088/1757-899X/131/1/012005

Carrier dynamics in Zn _x Cd _1-x O films grown by molecular beam epitaxy

F. J. Cheng^*, Y. C. Lee, S. Y. Hu, Y. C. Lin, K. K. Tiong, Wu-Ching Chou

^*此作品的通信作者

電子物理學系

研究成果: Conference article › 同行評審

摘要

In this work, the carrier dynamics in Zn_1-xCd_xO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.

原文	English
文章編號	012005
期刊	IOP Conference Series: Materials Science and Engineering
卷	131
發行號	1
DOIs	https://doi.org/10.1088/1757-899X/131/1/012005
出版狀態	Published - 6 6月 2016
事件	4th International Conference on Manufacturing, Optimization, Industrial and Material Engineering, MOIME 2016 - Bali, 印度尼西亞持續時間: 19 3月 2016 → 20 3月 2016

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title = "Carrier dynamics in Zn x Cd 1-x O films grown by molecular beam epitaxy",

abstract = "In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.",

author = "Cheng, {F. J.} and Lee, {Y. C.} and Hu, {S. Y.} and Lin, {Y. C.} and Tiong, {K. K.} and Wu-Ching Chou",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 4th International Conference on Manufacturing, Optimization, Industrial and Material Engineering, MOIME 2016 ; Conference date: 19-03-2016 Through 20-03-2016",

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T1 - Carrier dynamics in Zn x Cd 1-x O films grown by molecular beam epitaxy

AU - Cheng, F. J.

AU - Lee, Y. C.

AU - Hu, S. Y.

AU - Lin, Y. C.

AU - Tiong, K. K.

AU - Chou, Wu-Ching

PY - 2016/6/6

Y1 - 2016/6/6

N2 - In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.

AB - In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.

UR - http://www.scopus.com/inward/record.url?scp=84977266882&partnerID=8YFLogxK

U2 - 10.1088/1757-899X/131/1/012005

DO - 10.1088/1757-899X/131/1/012005

M3 - Conference article

AN - SCOPUS:84977266882

SN - 1757-8981

VL - 131

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 1

M1 - 012005

T2 - 4th International Conference on Manufacturing, Optimization, Industrial and Material Engineering, MOIME 2016

Y2 - 19 March 2016 through 20 March 2016

ER -

Carrier dynamics in Zn x Cd 1-x O films grown by molecular beam epitaxy

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Carrier dynamics in Zn _x Cd _1-x O films grown by molecular beam epitaxy