Carrier dynamics in isoelectronic ZnSe1-xOx semiconductors

Y. C. Lin; H. L. Chung; Wu-Ching Chou; Wei-Kuo Chen; Wen-Hao Chang; C. Y. Chen; J. I. Chyi

doi:10.1063/1.3473776

Carrier dynamics in isoelectronic ZnSe_1-xO_x semiconductors

Y. C. Lin, H. L. Chung, Wu-Ching Chou, Wei-Kuo Chen, Wen-Hao Chang, C. Y. Chen, J. I. Chyi

電子物理學系

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22 引文斯高帕斯（Scopus）

摘要

This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe_1-xO_x (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent β followed by its monotonic increase with increasing temperature.

原文	English
文章編號	041909
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	97
發行號	4
DOIs	https://doi.org/10.1063/1.3473776
出版狀態	Published - 26 7月 2010

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AU - Lin, Y. C.

AU - Chung, H. L.

AU - Chou, Wu-Ching

AU - Chen, Wei-Kuo

AU - Chang, Wen-Hao

AU - Chen, C. Y.

AU - Chyi, J. I.

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N2 - This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1-xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent β followed by its monotonic increase with increasing temperature.

AB - This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1-xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent β followed by its monotonic increase with increasing temperature.

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Carrier dynamics in isoelectronic ZnSe1-xOx semiconductors

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Carrier dynamics in isoelectronic ZnSe_1-xO_x semiconductors