@inproceedings{f21075537d4a4f1789e335f16b6fc1da,
title = "Carrier dynamics in dilute II-VI oxide highly mismatched alloys",
abstract = "This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.",
keywords = "Carrier dynamics, Highly mismatched alloys, II-VI oxides, Intermediate band, Time-resolved photoluminescence, ZnSeO, ZnTeO",
author = "Lin, {Yan Cheng} and Wu-Ching Chou and Chyi, {Jen Inn} and Tooru Tanaka",
year = "2014",
month = jan,
day = "1",
doi = "10.1117/12.2039837",
language = "English",
isbn = "9780819499004",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Oxide-Based Materials and Devices V",
address = "美國",
note = "5th Annual Oxide Based Materials and Devices Conference ; Conference date: 02-02-2014 Through 05-02-2014",
}