跳至主導覽
跳至搜尋
跳過主要內容
國立陽明交通大學研發優勢分析平台 首頁
English
中文
首頁
人員
單位
研究成果
計畫
獎項
活動
貴重儀器
影響
按專業知識、姓名或所屬機構搜尋
Capacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperatures
Jenn-Fang Chen
*
, Nie Chuan Chen, Pai Yong Wang, Jiin Shung Wang, Chi Ming Weng
*
此作品的通信作者
電子物理學系
研究成果
:
Article
›
同行評審
總覽
指紋
指紋
深入研究「Capacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperatures」主題。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Low Temperature
100%
Capacitance Dispersion
100%
GaAs Structure
100%
Annealing
16%
Electrical Properties
16%
Cm(III)
16%
Capacitance Model
16%
Frequency Dispersion
16%
Capacitance Variable Time
16%
Voltage Characteristics
16%
Low-temperature-grown GaAs
16%
Band Diagram
16%
Frequency Dependent Capacitance
16%
Current-voltage Characteristics
16%
Mid-frequency
16%
Capacitance-voltage
16%
Engineering
Gallium Arsenide
100%
Low-Temperature
100%
Constant Time
14%
Frequency Dispersion
14%
Current-Voltage Characteristic
14%
Band Diagram
14%
Material Science
Gallium Arsenide
100%
Capacitance
100%
Current Voltage Characteristics
20%
Physics
Time Constant
100%
Electrical Property
100%