Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo method

Ta-Hui Wang*, K. Hess

*此作品的通信作者

研究成果: Article同行評審

57 引文 斯高帕斯(Scopus)

摘要

The electron velocity distribution is calculated for an idealized model of the high electron mobility transistor using a many-particle Monte Carlo model and a self-consistent two-dimensional Poisson solver. Hot electron effects, nonstationary effects, and real space transfer are analyzed. The results show that significant velocity overshoot, 2.8×10 7 cm/s at 300 K and 3.7×10 7 cm/s at 77 K exists under the gate and that the velocity overshoot is limited by both k-space transfer and real-space transfer. The values of the overshoot velocities are much smaller than those obtained from the more conventional drift-diffusion model.

原文English
頁(從 - 到)5336-5339
頁數4
期刊Journal of Applied Physics
57
發行號12
DOIs
出版狀態Published - 1 十二月 1985

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