摘要
An attempt was made to calculate the sputtering rate of a cathode during a plasma-assisted deposition or etching process. In this attempt, an approach combining sputtering models and Monte Carlo simulation was developed. By using a Cr target as an example, the approach was shown to be satisfactory.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 5295-5298 |
| 頁數 | 4 |
| 期刊 | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 卷 | 42 |
| 發行號 | 8 |
| DOIs | |
| 出版狀態 | Published - 8月 2003 |