Calculation of sputtering rate by a Monte Carlo method

J. H. Hsieh*, C. Li

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The sputtering rate during a plasma-assisted process was calculated. Monte Carlo simulation was used for the calculation. It was observed that sputtering was one of the most important mechanisms occurring on the cathod during a plasma-assisted process.

原文English
頁(從 - 到)1125-1126
頁數2
期刊Journal of Materials Science Letters
22
發行號16
DOIs
出版狀態Published - 15 8月 2003

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