Calculation of high-field diffusivity by a many-particle Monte Carlo simulation including a complete band structure for GaAs

Ta-Hui Wang*, K. Hess

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4 引文 斯高帕斯(Scopus)

摘要

The electron diffusion coefficients of GaAs in the high-field regime ranging from 10 to 500 kV/cm have been calculated by a many-particle Monte Carlo simulation. The band-structure model in the simulation, calculated using the empirical pseudopotential method, includes the lowest two conduction bands and the full many-valley structure for each band. Our calculation shows that the diffusivity decreases drastically (by a factor of ≊30) as the field increases from 10 to 250 kV/cm and extremely low diffusion coefficients, 1.1 cm 2 /s for D 1 and 6.1 cm 2 /s for D t , are obtained at ≊250 kV/cm for GaAs.

原文English
頁(從 - 到)2793-2795
頁數3
期刊Journal of Applied Physics
56
發行號10
DOIs
出版狀態Published - 1 12月 1984

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