BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs

Pin Su*, Samuel K.H. Fung, Stephen Tang, Fariborz Assaderaghi, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference article同行評審

37 引文 斯高帕斯(Scopus)

摘要

BSIMPD- a physics-based SPICE model is developed for bridging deep-submicron CMOS designs using partially-depleted SOI technologies. Formulated on top of the industry-standard bulk-MOSFET model BSIM3v3 for a sound base of scalability and robustness, BSIMPD captures SOI-specific dynamic behaviors with its built-in floating-body, self-heating and body-contact models. A parameter-extraction strategy is demonstrated, and the simulation efficiency is studied. The model has been tested extensively within IBM on state-of-the-art high speed SOI technologies. It has been implemented in many circuit simulators.

原文English
頁(從 - 到)197-200
頁數4
期刊Proceedings of the Custom Integrated Circuits Conference
DOIs
出版狀態Published - 2000
事件CICC 2000: 22nd Annual Custom Integrated Circuits Conference - Orlando, FL, USA
持續時間: 21 5月 200024 5月 2000

指紋

深入研究「BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs」主題。共同形成了獨特的指紋。

引用此