BSIM4 gate leakage model including source-drain partition

Keyphrases

• BSIM4 100%
• Gate Leakage 100%
• Leakage Model 100%
• Leakage Current 66%
• CMOS Process 33%
• Gate Leakage Current 33%
• Gate Dielectric 33%
• MOSFET 33%
• Oxides 33%
• Gate Oxide 33%
• Direct Tunneling 33%
• Circuit Performance 33%
• Tunneling Mechanism 33%
• MOS Capacitor 33%
• Advanced CMOS 33%
• Drain-source Current 33%
• MOSFET Modeling 33%
• Physical Sources 33%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Dielectric 50%
• Direct Tunneling 50%
• Current Drain 50%
• Gate Oxide 50%
• Circuit Performance 50%

Material Science

• Oxide Compound 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Electronic Circuit 50%
• Capacitor 50%
• Dielectric Material 50%