Broadly-tunable narrow-linewidth micromachined laser/photodetector and phototransistor

F. Sugihwo; Chien-Chung Lin; L. A. Eyres; M. M. Fejer; J. S. Harris

doi:10.1109/IEDM.1998.746444

Broadly-tunable narrow-linewidth micromachined laser/photodetector and phototransistor

F. Sugihwo^*, Chien-Chung Lin, L. A. Eyres, M. M. Fejer, J. S. Harris

^*此作品的通信作者

光電系統研究所

研究成果: Conference article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The key limitation to dense Wavelength Division Multiplexing (WDM) systems is the receiving end since laser linewidths are typically less than 1 angstrom. By reverse biasing the p-i-n diode region, we demonstrated dual functionality of wavelength-tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs) as wavelength-tunable Resonant Cavity Photodetectors (RCPs) with linewidths less than 2.5 nm. Additionally, we have fabricated wavelength-tunable Resonant Cavity PhotoTransistors (RCPTs) with linewidths as narrow as 1.7 nm. Wavelength-tunable RCPTs are capable of high quantum efficiency, narrow linewidth, and high-speed operation, making them ideal devices for WDM receivers.

原文	English
頁（從 - 到）	665-668
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1998.746444
出版狀態	Published - 6 12月 1998
事件	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA 持續時間: 6 12月 1998 → 9 12月 1998

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10.1109/IEDM.1998.746444

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@article{1aae39ccb7e045d5981ece56cb9f6fb1,

title = "Broadly-tunable narrow-linewidth micromachined laser/photodetector and phototransistor",

abstract = "The key limitation to dense Wavelength Division Multiplexing (WDM) systems is the receiving end since laser linewidths are typically less than 1 angstrom. By reverse biasing the p-i-n diode region, we demonstrated dual functionality of wavelength-tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs) as wavelength-tunable Resonant Cavity Photodetectors (RCPs) with linewidths less than 2.5 nm. Additionally, we have fabricated wavelength-tunable Resonant Cavity PhotoTransistors (RCPTs) with linewidths as narrow as 1.7 nm. Wavelength-tunable RCPTs are capable of high quantum efficiency, narrow linewidth, and high-speed operation, making them ideal devices for WDM receivers.",

keywords = "Photodetectors, Phototransistors, Vertical cavity surface emitting lasers, Wavelength division multiplexing, Surface emitting lasers, Resonance, Masers, P-i-n diodes, Fiber lasers, Laser modes",

author = "F. Sugihwo and Chien-Chung Lin and Eyres, {L. A.} and Fejer, {M. M.} and Harris, {J. S.}",

year = "1998",

month = dec,

day = "6",

doi = "10.1109/IEDM.1998.746444",

language = "English",

pages = "665--668",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

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TY - JOUR

T1 - Broadly-tunable narrow-linewidth micromachined laser/photodetector and phototransistor

AU - Sugihwo, F.

AU - Lin, Chien-Chung

AU - Eyres, L. A.

AU - Fejer, M. M.

AU - Harris, J. S.

PY - 1998/12/6

Y1 - 1998/12/6

N2 - The key limitation to dense Wavelength Division Multiplexing (WDM) systems is the receiving end since laser linewidths are typically less than 1 angstrom. By reverse biasing the p-i-n diode region, we demonstrated dual functionality of wavelength-tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs) as wavelength-tunable Resonant Cavity Photodetectors (RCPs) with linewidths less than 2.5 nm. Additionally, we have fabricated wavelength-tunable Resonant Cavity PhotoTransistors (RCPTs) with linewidths as narrow as 1.7 nm. Wavelength-tunable RCPTs are capable of high quantum efficiency, narrow linewidth, and high-speed operation, making them ideal devices for WDM receivers.

AB - The key limitation to dense Wavelength Division Multiplexing (WDM) systems is the receiving end since laser linewidths are typically less than 1 angstrom. By reverse biasing the p-i-n diode region, we demonstrated dual functionality of wavelength-tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs) as wavelength-tunable Resonant Cavity Photodetectors (RCPs) with linewidths less than 2.5 nm. Additionally, we have fabricated wavelength-tunable Resonant Cavity PhotoTransistors (RCPTs) with linewidths as narrow as 1.7 nm. Wavelength-tunable RCPTs are capable of high quantum efficiency, narrow linewidth, and high-speed operation, making them ideal devices for WDM receivers.

KW - Photodetectors

KW - Phototransistors

KW - Vertical cavity surface emitting lasers

KW - Wavelength division multiplexing

KW - Surface emitting lasers

KW - Resonance

KW - Masers

KW - P-i-n diodes

KW - Fiber lasers

KW - Laser modes

UR - http://www.scopus.com/inward/record.url?scp=0032272379&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1998.746444

DO - 10.1109/IEDM.1998.746444

M3 - Conference article

AN - SCOPUS:0032272379

SN - 0163-1918

SP - 665

EP - 668

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Broadly-tunable narrow-linewidth micromachined laser/photodetector and phototransistor

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