Broad-spectrum light emission from metal-insulator-silicon tunnel diodes

James G. Mihaychuk*, Mike W. Denhoff, Scan P. McAlister, W. Ross McKinnon, Jean Lapointe, Albert Chin

*此作品的通信作者

    研究成果: Conference article同行評審

    摘要

    We report broad-spectrum electroluminescence (EL) in metal-insulator- silicon (MIS) tunnel diodes. In addition to Si-band-edge EL near 1.1 eV, hot-electron EL in Si can span a detector-limited range from 0.7 eV to 2.6 eV (1780 nm to 480 nm). The maximum EL photon energy increases with forward-bias voltage. In one implementation, sub-micron-size sites for light emission appear during forward-bias stress. The number of sites is linear in the applied current, consistent with formation of an anti-fuse at each site following breakdown of the insulator. We compare the post-stress current-voltage data to the quantum-point-contact model. Results are presented for various p-type Si(100) MIS devices having thin (8 nm or less) insulating layers of SiO 2, Al2O3, and HfOxNy. We also describe novel MIS devices in which electron-beam lithography of an 18-nm-thick SiO2 insulator is used to define the EL sites.

    原文English
    文章編號05
    頁(從 - 到)29-40
    頁數12
    期刊Progress in Biomedical Optics and Imaging - Proceedings of SPIE
    5730
    DOIs
    出版狀態Published - 21 7月 2005
    事件Optoelectronic Integration on Silicon II - San Jose, CA, United States
    持續時間: 25 1月 200526 1月 2005

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