Breakdown modes and their evolution in ultrathin gate oxide

Horng-Chih Lin*, Da Yuan Lee, Tiao Yuan Huang

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Post-breakdown current-voltage characteristics of metal-oxide-semiconductor (MOS) devices with an ultrathin gate oxide layer have been carefully studied. Several breakdown modes were identified. Specifically, it was found that the typical soft-breakdown mode induced in an oxide layer thinner than 3 nm is actually quite different from that in an oxide layer thicker than 3 nm. Based on these findings, we have also proposed a model to explain the evolution of different breakdown modes. The model takes into consideration the thermal runaway process at the breakdown moment, and is substantiated by a number of experimental findings. Impacts of each breakdown mode on device switching behavior are also discussed.

原文English
頁(從 - 到)5957-5963
頁數7
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
發行號10
DOIs
出版狀態Published - 10月 2002

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