摘要
Cu direct bonding has been achieved at 150 C by using (111)-oriented nanotwinned Cu (nt-Cu) because it has the fastest surface diffusivity. In this study, nt-Cu was bonded at even lower temperature of 120 C by roughening one of the nt-Cu surfaces. However, the flat-to-flat nt-Cu could not be bonded at the same temperature. This result violates a bonding concept that "for good wafer bonding, the contact area must be as large as possible". This paper discusses in detail two possible bonding mechanisms: diffusion and creep/plastic deformation.
原文 | English |
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文章編號 | 124005 |
期刊 | ECS Journal of Solid State Science and Technology |
卷 | 9 |
發行號 | 12 |
DOIs | |
出版狀態 | Published - 12月 2020 |