Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures

Po Chun Liu; Yew-Chuhg Wu

doi:10.1149/1.1843732

Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures

Po Chun Liu^*, Yew-Chuhg Wu

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The heteroeptixial integration of the III-V semiconductor compound, which was limited by lattice mismatch, can now be accomplished by using the wafer bonding process. In this study, a line-patterned In_0.5Ga _0.5P layer was successfully transferred to the GaP wafer through the wafer bonding process for the successive growth of high-brightness light-emitting diode (LED) structures.

原文	English
期刊	Electrochemical and Solid-State Letters
卷	8
發行號	2
DOIs	https://doi.org/10.1149/1.1843732
出版狀態	Published - 21 2月 2005

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title = "Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures",

abstract = "The heteroeptixial integration of the III-V semiconductor compound, which was limited by lattice mismatch, can now be accomplished by using the wafer bonding process. In this study, a line-patterned In0.5Ga 0.5P layer was successfully transferred to the GaP wafer through the wafer bonding process for the successive growth of high-brightness light-emitting diode (LED) structures.",

author = "Liu, {Po Chun} and Yew-Chuhg Wu",

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AU - Liu, Po Chun

AU - Wu, Yew-Chuhg

PY - 2005/2/21

Y1 - 2005/2/21

N2 - The heteroeptixial integration of the III-V semiconductor compound, which was limited by lattice mismatch, can now be accomplished by using the wafer bonding process. In this study, a line-patterned In0.5Ga 0.5P layer was successfully transferred to the GaP wafer through the wafer bonding process for the successive growth of high-brightness light-emitting diode (LED) structures.

AB - The heteroeptixial integration of the III-V semiconductor compound, which was limited by lattice mismatch, can now be accomplished by using the wafer bonding process. In this study, a line-patterned In0.5Ga 0.5P layer was successfully transferred to the GaP wafer through the wafer bonding process for the successive growth of high-brightness light-emitting diode (LED) structures.

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U2 - 10.1149/1.1843732

DO - 10.1149/1.1843732

M3 - Article

AN - SCOPUS:13444249609

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 2

ER -

Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures

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