Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures

Po Chun Liu*, Yew-Chuhg Wu

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The heteroeptixial integration of the III-V semiconductor compound, which was limited by lattice mismatch, can now be accomplished by using the wafer bonding process. In this study, a line-patterned In0.5Ga 0.5P layer was successfully transferred to the GaP wafer through the wafer bonding process for the successive growth of high-brightness light-emitting diode (LED) structures.

原文English
期刊Electrochemical and Solid-State Letters
8
發行號2
DOIs
出版狀態Published - 21 2月 2005

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