Body voltage modulation for high performance a-IGZO TFT and its application on new inverter structure

Hsiao-Wen Zan*, Wei Tsung Chen, Hsiu Wen Hsueh, Chun Cheng Yeh, Chuang Chuang Tsai, Hsin-Fei Meng, Chia Chun Yeh, Ted Hong Shinn

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We develop a new and simple method to adjust the threshold voltage of a-IGZO TFT by capping different metals on device back channel. A threshold voltage shifts from -7.4V to +5.5V can be obtained. The field-effect mobility is 2 to 3 times larger than the one before metal capping. An n-type a-IGZO inverter includes one enhancement-mode TFT (capped by titanium) and one depletion-mode TFT (capped by calcium/aluminum dual layer) is fabricated. The voltage gain is 38 when the bias voltage is 20 volts.

原文English
主出版物標題49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
頁面1158-1161
頁數4
出版狀態Published - 1 12月 2011
事件49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, 美國
持續時間: 15 5月 201120 5月 2011

出版系列

名字49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
3

Conference

Conference49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
國家/地區美國
城市Los Angeles, CA
期間15/05/1120/05/11

指紋

深入研究「Body voltage modulation for high performance a-IGZO TFT and its application on new inverter structure」主題。共同形成了獨特的指紋。

引用此