In this letter, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channelMOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversionmode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent ION/IOFF ratio and good short channel effect control on the channel potential. The current ratio is of ∼6 × 103 (ID) at VDS = -0.1 V, V GS = -3, and 0 V. The relatively low OFF-current is of 6 nA/ μm at VDS = -0.1 V and VGS = 0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at LG = 120 nm.
|頁（從 - 到）||12-14|
|期刊||IEEE Electron Device Letters|
|出版狀態||Published - 1 1月 2014|