Body-tied germanium tri-gate junctionless PMOSFET with in-situ boron doped channel

In this letter, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channelMOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversionmode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent I_ON/I_OFF ratio and good short channel effect control on the channel potential. The current ratio is of ∼6 × 10³ (I_D) at V_DS = -0.1 V, V _GS = -3, and 0 V. The relatively low OFF-current is of 6 nA/ μm at V_DS = -0.1 V and V_GS = 0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at LG = 120 nm.