Body-tied germanium tri-gate junctionless PMOSFET with in-situ boron doped channel

Che Wei Chen, Cheng Ting Chung, Ju Yuan Tzeng, Pang Sheng Chang, Guang Li Luo, Chao-Hsin Chien

    研究成果: Article同行評審

    13 引文 斯高帕斯(Scopus)

    摘要

    In this letter, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channelMOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversionmode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent ION/IOFF ratio and good short channel effect control on the channel potential. The current ratio is of ∼6 × 103 (ID) at VDS = -0.1 V, V GS = -3, and 0 V. The relatively low OFF-current is of 6 nA/ μm at VDS = -0.1 V and VGS = 0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at LG = 120 nm.

    原文English
    文章編號6684319
    頁(從 - 到)12-14
    頁數3
    期刊IEEE Electron Device Letters
    35
    發行號1
    DOIs
    出版狀態Published - 1 一月 2014

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