We fabricated body-tied Ge p-channel fin fieldeffect transistors (p-FinFETs) directly on a Si substrate with a high-?/metal gate stack. This scheme is fully compatible with Si standard processing. The FinFET structure has excellent control on the channel potential and thus can improve the short-channel effect. The diode with p?Si heterojunctions illustrates a remarkably high ION/IOFF > 106 despite the presence of misfit dislocations at the interface. The high-hole-mobility body-tied Ge p-FinFETs with a fin widthWFin of ∼40 nm and a mask channel length LMask of 120 nm depict a driving current of 22 μA/μm at G = ?2 V and a low OFF-current of 3 nA/μm at VG = 2 V. The subthreshold characteristics with a swing of 228 mV/dec and drain-induced barrier lowering of 288 mV/V are demonstrated..
|頁（從 - 到）||1678-1680|
|期刊||IEEE Electron Device Letters|
|出版狀態||Published - 29 11月 2012|