Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K.

Hao-Chung Kuo, S. W. Chen, T. T. Kao, C. C. Kao, J. R. Chen, Tien-chang Lu, S. C. Wang

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In the paper, we describe the fabrication and performance characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) by optical pumping and current injection. According to the employment of high-quality and high-reflectivity AlN/GaN DBRs in the whole structure, the lasing action of optically pumped GaN-based VCSELs with hybrid mirrors has been observed at room temperature. Due to the excellent results of optically pumped GaN-based VCSELs with hybrid mirrors, we further demonstrated the lasing behavior of GaN-based VCSELs by continuous-wave current injection at 77 K. The laser has one dominated blue wavelength located at 462 nm with a linewidth of about 0.15 nm and the threshold injection current at 1.4 mA. The divergence angle and polarization ratio of the GaN-based VCSELs with hybrid mirrors are about 11.7° and 80 %, respectively. A larger spontaneous coupling efficiency of about 7.5×10-2 was also measured.

原文English
文章編號72161A
頁數11
期刊Proceedings of SPIE - The International Society for Optical Engineering
7216
DOIs
出版狀態Published - 1月 2009
事件Gallium Nitride Materials and Devices IV - San Jose, CA, United States
持續時間: 26 1月 200929 1月 2009

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