Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application

San-Yuan Chen; Chia Liang Sun; Shi Bai Chen; Albert Chin

doi:10.1063/1.1471937

Bi_3.25La_0.75Ti₃O₁₂ thin films on ultrathin Al₂O₃ buffered Si for ferroelectric memory application

San-Yuan Chen^*, Chia Liang Sun, Shi Bai Chen, Albert Chin

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

31 引文斯高帕斯（Scopus）

摘要

We have investigated the physical and electrical properties of Bi _3.25La_0.75Ti₃O₁₂ (BLT) thin films on Pt/Ti/SiO₂/Si and on Al₂O₃(6nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied ±10 V bias. However, the leakage current of BLT on Al ₂O₃/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al₂O₃/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down.

原文	English
頁（從 - 到）	3168-3170
頁數	3
期刊	Applied Physics Letters
卷	80
發行號	17
DOIs	https://doi.org/10.1063/1.1471937
出版狀態	Published - 29 4月 2002

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10.1063/1.1471937

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title = "Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application",

abstract = "We have investigated the physical and electrical properties of Bi 3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied ±10 V bias. However, the leakage current of BLT on Al 2O3/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down.",

author = "San-Yuan Chen and Sun, {Chia Liang} and Chen, {Shi Bai} and Albert Chin",

year = "2002",

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doi = "10.1063/1.1471937",

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journal = "Applied Physics Letters",

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T1 - Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application

AU - Chen, San-Yuan

AU - Sun, Chia Liang

AU - Chen, Shi Bai

AU - Chin, Albert

PY - 2002/4/29

Y1 - 2002/4/29

N2 - We have investigated the physical and electrical properties of Bi 3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied ±10 V bias. However, the leakage current of BLT on Al 2O3/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down.

AB - We have investigated the physical and electrical properties of Bi 3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied ±10 V bias. However, the leakage current of BLT on Al 2O3/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down.

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U2 - 10.1063/1.1471937

DO - 10.1063/1.1471937

M3 - Article

AN - SCOPUS:79956042758

SN - 0003-6951

VL - 80

SP - 3168

EP - 3170

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application

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Bi_3.25La_0.75Ti₃O₁₂ thin films on ultrathin Al₂O₃ buffered Si for ferroelectric memory application