@inproceedings{c6abc23c5a6349dba189a302e0b5d875,
title = "Bipolar Transistors' Holding Phenomena",
abstract = "Silicon Controlled Rectifier (SCR) is often applied for Electrostatic Discharge (ESD) protections. SCR holding voltage is requested to be larger than the integrated circuit (IC) operation voltage because SCR owns the latch-up phenomena. Bipolar transistors are more frequently than SCR to be used as ESD protections. Large holding voltages are also often requested for bipolar transistors. SCR owns the positive feedback circuit characteristics so it owns latch-up properties. However, bipolar transistors don't have the positive feedback circuit so the latch-up event should not occur. The latch-up characteristics in SCR and not in bipolar transistors are discovered well in this study through the silicon verifications.",
author = "Huang, {Shao Chang} and Hsu, {Kai Chieh} and Lin, {Chih Hsuan} and Wang, {Chien Wei} and Li, {Ching Ho} and Liao, {Chih Cherng} and Chuang, {Jung Tsun} and Lin, {Gong Kai} and Chen, {Lin Fan} and Chen, {Chun Chih} and Jou, {Yeh Ning} and Lee, {Jian Hsing} and Chen, {Ke Horng}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 ; Conference date: 17-07-2023 Through 19-07-2023",
year = "2023",
doi = "10.1109/ICCE-Taiwan58799.2023.10226846",
language = "English",
series = "2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "221--222",
booktitle = "2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings",
address = "美國",
}