Bipolar Transistors' Holding Phenomena

Shao Chang Huang*, Kai Chieh Hsu, Chih Hsuan Lin, Chien Wei Wang, Ching Ho Li*, Chih Cherng Liao, Jung Tsun Chuang, Gong Kai Lin, Lin Fan Chen, Chun Chih Chen, Yeh Ning Jou, Jian Hsing Lee, Ke Horng Chen*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Silicon Controlled Rectifier (SCR) is often applied for Electrostatic Discharge (ESD) protections. SCR holding voltage is requested to be larger than the integrated circuit (IC) operation voltage because SCR owns the latch-up phenomena. Bipolar transistors are more frequently than SCR to be used as ESD protections. Large holding voltages are also often requested for bipolar transistors. SCR owns the positive feedback circuit characteristics so it owns latch-up properties. However, bipolar transistors don't have the positive feedback circuit so the latch-up event should not occur. The latch-up characteristics in SCR and not in bipolar transistors are discovered well in this study through the silicon verifications.

原文English
主出版物標題2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面221-222
頁數2
ISBN(電子)9798350324174
DOIs
出版狀態Published - 2023
事件2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Pingtung, Taiwan
持續時間: 17 7月 202319 7月 2023

出版系列

名字2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023 - Proceedings

Conference

Conference2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023
國家/地區Taiwan
城市Pingtung
期間17/07/2319/07/23

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