Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

Yang Shun Fan; Po-Tsun Liu; Li Feng Teng; Ching Hui Hsu

doi:10.1063/1.4742737

Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

Yang Shun Fan, Po-Tsun Liu^*, Li Feng Teng, Ching Hui Hsu

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

41 引文斯高帕斯（Scopus）

摘要

Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching cycles within 2 V sweep voltage. The Ti/AZTO/Pt device showed stable retention characteristics for over 10 ⁴ s under read disturb stress condition. Besides, the electrical conduction mechanism was dominated by ohmic conduction in low resistance state, while the current transport behavior followed a trap-controlled space-charge-limited conduction process in high resistance state.

原文	English
文章編號	052901
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	101
發行號	5
DOIs	https://doi.org/10.1063/1.4742737
出版狀態	Published - 30 7月 2012

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abstract = " Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching cycles within 2 V sweep voltage. The Ti/AZTO/Pt device showed stable retention characteristics for over 10 4 s under read disturb stress condition. Besides, the electrical conduction mechanism was dominated by ohmic conduction in low resistance state, while the current transport behavior followed a trap-controlled space-charge-limited conduction process in high resistance state.",

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AU - Hsu, Ching Hui

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Y1 - 2012/7/30

N2 - Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching cycles within 2 V sweep voltage. The Ti/AZTO/Pt device showed stable retention characteristics for over 10 4 s under read disturb stress condition. Besides, the electrical conduction mechanism was dominated by ohmic conduction in low resistance state, while the current transport behavior followed a trap-controlled space-charge-limited conduction process in high resistance state.

AB - Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching cycles within 2 V sweep voltage. The Ti/AZTO/Pt device showed stable retention characteristics for over 10 4 s under read disturb stress condition. Besides, the electrical conduction mechanism was dominated by ohmic conduction in low resistance state, while the current transport behavior followed a trap-controlled space-charge-limited conduction process in high resistance state.

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Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

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