Bipolar nonlinear Ni/TiO2/Ni selector for 1S1R crossbar array applications

Jiun Jia Huang; Yi Ming Tseng; Chung Wei Hsu; Tuo-Hung Hou

doi:10.1109/LED.2011.2161601

Bipolar nonlinear Ni/TiO₂/Ni selector for 1S1R crossbar array applications

Jiun Jia Huang^*, Yi Ming Tseng, Chung Wei Hsu, Tuo-Hung Hou

^*此作品的通信作者

研究成果: Article › 同行評審

174 引文斯高帕斯（Scopus）

摘要

A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO₂/Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO ₂ barriers. The series connection with an HfO ₂ -resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.

原文	English
文章編號	5967885
頁（從 - 到）	1427-1429
頁數	3
期刊	Ieee Electron Device Letters
卷	32
發行號	10
DOIs	https://doi.org/10.1109/LED.2011.2161601
出版狀態	Published - 10月 2011

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10.1109/LED.2011.2161601

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title = "Bipolar nonlinear Ni/TiO2/Ni selector for 1S1R crossbar array applications",

abstract = " A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO2/Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO 2 barriers. The series connection with an HfO 2 -resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.",

keywords = "4F, Crossbar array, resistance random access memory, resistive switching, sneak current",

author = "Huang, {Jiun Jia} and Tseng, {Yi Ming} and Hsu, {Chung Wei} and Tuo-Hung Hou",

year = "2011",

month = oct,

doi = "10.1109/LED.2011.2161601",

language = "English",

volume = "32",

pages = "1427--1429",

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T1 - Bipolar nonlinear Ni/TiO2/Ni selector for 1S1R crossbar array applications

AU - Huang, Jiun Jia

AU - Tseng, Yi Ming

AU - Hsu, Chung Wei

AU - Hou, Tuo-Hung

PY - 2011/10

Y1 - 2011/10

N2 - A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO2/Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO 2 barriers. The series connection with an HfO 2 -resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.

AB - A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO2/Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO 2 barriers. The series connection with an HfO 2 -resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.

KW - 4F

KW - Crossbar array

KW - resistance random access memory

KW - resistive switching

KW - sneak current

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DO - 10.1109/LED.2011.2161601

M3 - Article

AN - SCOPUS:80053565784

SN - 0741-3106

VL - 32

SP - 1427

EP - 1429

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 10

M1 - 5967885

ER -

Bipolar nonlinear Ni/TiO2/Ni selector for 1S1R crossbar array applications

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Bipolar nonlinear Ni/TiO₂/Ni selector for 1S1R crossbar array applications